THE ULTIMATE GUIDE TO GERMANIUM

≤ 0.15) is epitaxially developed with a SOI substrate. A thinner layer of Si is grown on this SiGe layer, and after that the structure is cycled by way of oxidizing and annealing phases. Because of the preferential oxidation of Si about Ge [68], the initial Si1–Studies and data to the worldwide offer of, demand for, and movement from the minera